The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 27, 1999

Filed:

Mar. 10, 1997
Applicant:
Inventors:

Kumar Shiralagi, Chandler, AZ (US);

Saied N Tehrani, Tempe, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438604 ; 438606 ; 438607 ; 438695 ; 438718 ;
Abstract

A method of resistless gate metal etch in the formation of a field effect transistor is disclosed, which includes providing a first layer of a first semiconductor material having a surface. A second layer of a second semiconductor material is formed on the surface and resistlessly patterned to define a masked and an unmasked portions. The unmasked portion of the second layer is etched away to the first layer to enable gate formation.


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