The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 1999
Filed:
Jul. 28, 1997
Toshiaki Kitano, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device includes an InP substrate; an undoped InAlAs buffer layer, an undoped InGaAs active layer, and an n type InAlAs electron supply layer successively disposed on the InP substrate; a T-shaped gate electrode on the n type electron supply layer, the T-shaped gate electrode having an upper overhanging part; n type InGaAs cap layers disposed on the n type electron supply layer at opposite sides of and spaced apart from the T-shaped gate electrode, each cap layer having a portion positioned beneath the upper overhanging part of the T-shaped gate electrode; and a source electrode and a drain electrode respectively disposed on the cap layers, each of these electrodes having a portion positioned beneath the upper overhanging part of the T-shaped gate electrode.