The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 13, 1999
Filed:
Jun. 26, 1998
Tae Hum Yang, Kyoungki-do, KR;
Young Dong Joo, Kyoungki-do, KR;
Joo Young Kim, Kyoungki-do, KR;
Jong Bae Jeong, Kyoungki-do, KR;
Jong Seuk Lee, Kyoungki-do, KR;
Abstract
The present invention provides a method for programming and erasing a plurality of flash memory cells simultaneously while the power consumptions for those operations are significantly reduced, and the method for programming a memory cell of a flash memory device, wherein the memory cell is formed on a P-well surrounded by an N-well of a semiconductor substrate, including the steps of: applying a negative voltage to a control gate of the memory cell; applying a positive voltage to a drain of the memory cell; applying a positive voltage to the P-well, wherein the voltage is the same as or lower than the voltage applied to the drain; applying a power supply voltage to the N-well; and leaving a source of the memory cell uncoupled, wherein the steps are performed either in sequence or at random.