The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Jan. 21, 1997
Applicant:
Inventors:
Christopher K Davis, Merrin Island, FL (US);
George Bajor, Melbourne, FL (US);
James D Beasom, Melbourne, FL (US);
Thomas L Crandell, Palm Bay, FL (US);
Taewon Jung, Palm Bay, FL (US);
Anthony L Rivoli, Palm Bay, FL (US);
Assignee:
Harris Corporation, Melbourne, FL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257511 ; 257520 ; 257525 ; 257517 ;
Abstract
A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.