The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Oct. 23, 1995
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257194 ; 257365 ;
Abstract
The semiconductor device comprises a substrate, a first conductive layer formed on the substrate with a first insulating layer inserted therebetween, thereby to constitute a first gate electrode, a second conductive layer selectively formed on the first gate electrode with a second insulating layer inserted therebetween, and a third conductive layer formed on the first and second conductive layer, thereby to constitute first and second electrodes respectively connected to the first and second conductive layers.
Oowaki, Yukihito. (1999). Semiconductor device and a manufacturing method thereof (U.S. Patent No. 5892247). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5892247
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