The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
Apr. 27, 1995
Wan Yee Cheung, Bridgewater, NJ (US);
Sailesh Chittipeddi, Emmaus, PA (US);
Chong-Cheng Fu, Austin, TX (US);
Taeho Kook, Lower Macungie Township, PA (US);
Avinoam Kornblit, Highland Park, NJ (US);
Steven Alan Lytle, Orlando, FL (US);
Kurt George Steiner, Orlando, FL (US);
Tungsheng Yang, Orlando, FL (US);
Lucent Technologies, Inc., Murray Hill, NJ (US);
Abstract
A method of forming low stack height transistors having controllable linewidth in an integrated circuit without channeling is disclosed. A disposable hardmask of doped glass is utilized to define the gate and subsequently protect the gate (and the underlying substrate) during ion implantation which forms the source and drains. An anti-reflective coating helps protect against reflective gate notching. A variety of silicided and non-silicided) structures may be formed.