The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 1999
Filed:
May. 05, 1998
Charles R Lottes, Ballwin, MO (US);
Thomas A Torack, Oakland, MO (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
A reactor for depositing an epitaxial layer on a semiconductor wafer contained within the reactor during a chemical vapor deposition process. The reactor comprises a reaction chamber sized and shaped for receiving a semiconductor wafer and an inlet passage in communication with the reaction chamber for delivering reactant gas to the reaction chamber. In addition the reactor includes a susceptor positioned in the reaction chamber for supporting the semiconductor wafer during the chemical vapor deposition process. Further, the reactor comprises an injector including a metering plate generally blocking reactant gas flow through the inlet passage. The plate has a slot extending through the plate totally within a periphery of the plate. The slot is sized for selectively restricting reactant gas flow past the plate thereby to meter reactant gas delivery to the chamber.