The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1999
Filed:
Dec. 19, 1996
Ta-Lee Yu, Hsinchu Hsien, TW;
Chau-Neng Wu, Kaohsiung Hsien, TW;
Ling-Yen Yeh, Taipei, TW;
Frank S-T Lin, Taipei, TW;
Konrad Young, Taipei, TW;
Windbond Electronics, Corp., Hsinchu, TW;
Abstract
An electrostatic discharge protection circuit formed in a semiconductor substrate includes a vertical bipolar junction transistor having a base which is grounded, an emitter connected to an output/input bonding pad of an integrated circuit, and a collector connected to a high power source via a resistor. The resistor is a parasitic resistor created by controlling the distance between the diffusion regions or the distance between a p-type well region and an n-type well region or formed by a lightly doped diffusion region in the semiconductor substrate to prevent current crowding and increase electrostatic protection.