The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1999
Filed:
Dec. 16, 1997
Kuo-Chien Wu, Maio Li, TW;
Holtek Microelectronics Inc., , TW;
Abstract
A method is provided for manufacturing a polysilicon with a relatively small line width. The method includes steps of: a) forming a first layer of photoresist with a line pattern having a first line interval and a first line width over the polysilicon; b) etching a portion of the polysilicon for forming the polysilicon with a second line interval x and a second line width y respectively equal to the first line interval and the first line width; c) forming a second layer of photoresist with a third line interval and a third line width over the polysilicon; d) etching another portion of the polysilicon for forming the polysilicon with a fourth line interval x`, equal to the third line interval, and a fourth line width y`; e) depositing a polysilicon film over the polysilicon with the relatively small line width; and f) etching a portion of the polysilicon film to form sidewalls of the polysilicon with the relatively small line width for adjusting the relatively small line width of the polysilicon.