The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 1999
Filed:
Dec. 14, 1995
Nobuya Nagahisa, Shiga-ken, JP;
Takaaki Kamimura, Himeji, JP;
Kunio Matumura, Himeji, JP;
Takayoshi Dohi, Hyogo-ken, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
The present invention has a semiconductor device including a substrate made of an insulating material, a gate electrode formed on the substrate, a thin film made of a silicon semiconductor and formed on the gate electrode through a gate insulating film, a protective film formed on the thin film and having two opposing major surfaces, and a source electrode and a drain electrode formed to be electrically connected with the thin film, wherein the first major surface of the two major surfaces of the protective film is in contact with the thin film, and a region near the second major surface of the protective film contains oxygen. The present invention has a method of manufacturing a semiconductor device, in which a gate electrode is on a substrate made of an insulating material, a thin film made of a silicon semiconductor is formed on the gate electrode through a gate insulating film, a protective film having two opposing major surfaces in which a first major surface is in contact with the thin film and a region near a second major surface contains oxygen is formed on the thin film, and a source electrode and a drain electrode are formed to electrically connect with the thin film.