The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1999
Filed:
Sep. 14, 1995
Charles Turner, Boise, ID (US);
Randhir P Thakur, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method is disclosed for uniformly doping HSG polycrystalline silicon independent of the other layers of the semiconductor substrate. A semiconductor substrate having a silicon dioxide layer formed superjacent a polysilicon layer is provided in a chamber. A doped rough silicon layer is formed in situ superjacent the silicon dioxide layer. This is accomplished by depositing the silicon layer superjacent the silicon dioxide layer and exposing the silicon layer to a source gas, a dopant gas, and energy, preferably in situ to thereby form uniformly doped silicon layer and roughened polysilicon layer using rapid thermal chemical vapor deposition techniques or low pressure chemical vapor deposition. Alternatively, a uniformly doped roughened polysilicon layer is formed superjacent the silicon dioxide layer in situ. This formation is achieved by depositing an amorphous silicon layer superjacent the silicon dioxide layer and roughening the amorphous silicon layer in situ. The step of roughening is achieved by vacuum annealing the amorphous silicon layer using rapid thermal chemical vapor deposition techniques or low pressure chemical vapor deposition. The roughened amorphous silicon layer is doped by exposing to a source gas, a dopant gas and energy.