The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 1999
Filed:
Jun. 06, 1996
Cheon-jin Yun, Kyungki-do, KR;
Kyoung-sub Shin, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A semiconductor wafer having an active region where the active semiconductor devices are formed and a peripheral region between the active region and the wafer edge, is patterned by forming a patterned photoresist layer on the active region, such that the peripheral region is free of photoresist thereon. The patterned photoresist layer may be formed by forming a photoresist layer on the active region and on the peripheral region of the semiconductor wafer and removing the photoresist layer from the peripheral region of the semiconductor wafer. The photoresist in the active region is patterned. By removing the photoresist layer in the peripheral region of the wafer, excess etchant accumulation at the boundary of the active region and peripheral region is prevented, thereby reducing or preventing pitting of an underlying layer at the boundary.