The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 1999
Filed:
Jun. 16, 1997
Applicant:
Inventors:
Babak Adibi, Santa Clara, CA (US);
Jonathan Gerald England, Horsham, GB;
Stephen Moffatt, Bookham, GB;
Jose Antonio Marin, Austin, TX (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
25049221 ;
Abstract
High energy neutral contamination in an ion implanter can be caused by beam ions neutralised as they are temporarily accelerated at an electrode before being decelerated again to the desired implant energy. This occurs for example in the decel lens arrangement which includes an electrode at a relatively high negative potential to provide the required focusing. The level of this contamination is monitored by measuring the current drain on this negative field electrode.