The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 1999

Filed:

Mar. 29, 1996
Applicant:
Inventors:

Yohko Mashimoto, Ibaraki, JP;

Shuji Inoue, Ibaraki, JP;

Jiro Kubota, Ibaraki, JP;

Mashahiro Kuroda, Ibaraki, JP;

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257783 ; 257778 ; 257789 ; 257790 ;
Abstract

An apparatus and method for forming solder interconnection structures that reduce thermo-mechanical stresses at the solder joints of a semiconductor device and its supporting substrate. In one embodiment, the solder interconnection structure of the present invention comprises a semiconductor device and a substrate having a plurality of solder connections extending from the substrate to electrodes or bond pads on the semiconductor device. A multilayer structure is disposed between the semiconductor device and substrate filling the gap formed by the solder connections. The multilayer structure includes a first layer and a second layer, each having a different coefficient of thermal expansion. Thus, in accordance with the present invention, the stress concentration points are moved away from the solder joints of the semiconductor device and substrate to a point located between the first and second layers of the filler structure.


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