The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 09, 1999
Filed:
Feb. 27, 1998
Applicant:
Inventor:
Janmye Sung, Yang Mei, TW;
Assignee:
Vangaurd International Semiconductor Corporation, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438253 ; 438672 ;
Abstract
A process for fabricating a high density, capacitor over bit line, DRAM cell, using 8F.sup.2 technology, has been developed. The process features self-alignment of a tungsten bit line structure, to polycide word lines, and self-alignment of a capacitor node structure, to both tungsten bit lines, and to polycide word line structures. Self-alignment is accomplished by opening contact holes between polycide gate structures, and between tungsten bit line structures, which are coated with silicon nitride spacers, followed by filling with polysilicon plugs, which in turn contact underlying regions of the semiconductor substrate.