Methods for fabricating capacitor structures using a photoresist layer

Abstract

A method for fabricating an electrode structure of an integrated circuit device comprises the following steps. Initially, a conductive layer is formed on a substrate. A photoresist layer is formed on the conductive layer, wherein said photoresist layer includes a hole exposing a portion of said conductive layer. A portion of the conductive layer is then etched to a predetermined thickness that is less than a thickness of the conductive layer using said photoresist layer as an etching mask. The hole in the photoresist layer is enlarged by removing a portion of the photoresist layer, thereby exposing a surface portion of the conductive layer outside the etched portion of the conductive layer. An insulating layer is then formed on the surface portion of the conductive layer and the etched portion of the first conductive layer. The insulating layer is used as an etching mask for etching the conductive layer to form an electrode structure.