The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1999
Filed:
Mar. 11, 1997
John Manning Neilson, Norristown, PA (US);
Christopher Boguslaw Kocon, Plains, PA (US);
Richard Douglas Stokes, Shavertown, PA (US);
Linda Susan Brush, Mountaintop, PA (US);
John Lawrence Benjamin, Mountaintop, PA (US);
Louise Ellen Skurkey, Conyngham, PA (US);
Christopher Lawrence Rexer, Mountaintop, PA (US);
Harris Corporation, Melbourne, FL (US);
Abstract
A gate electrode control structure of an MOS-gated semiconductor device includes four doped regions including a first (source) region forming a first P-N junction with an enclosing composite region comprising a second, lightly doped (channel) region wholly enclosing a third heavily doped (body) region partly enclosing the first region, and a fourth (drain) region forming a P-N junction with the third region. The gate electrode control structure is fabricated using known gate electrode self-alignment doping processes but wherein, in the process for forming the third heavily doped region, a spacer layer is provided on the gate electrode for defining a spacing between the third region and the channel region with an improved degree of precision.