The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1999
Filed:
Jul. 07, 1995
Applicant:
Inventors:
Hyun Jin Jang, Bubaleub, KR;
Woo Bong Lee, Bubaleub, KR;
Young Hwa Mun, Bubaleub, KR;
Young Ho Jeon, Bubaleub, KR;
Jae Wan Koh, Bubaleub, KR;
Young Mo Koo, Bubaleub, KR;
Se Jeong Kim, Bubaleub, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437190 ; 437192 ; 437165 ; 427528 ;
Abstract
The present invention relates to a method for forming a TiNO metallic barrier layer acting as a diffusion barrier to intercept the diffusing of the Si atoms between metal layers, the method comprising the steps of: forming a TiN film through a sputtering equipment using Ar and N.sub.2 gas; implanting N.sub.2 O gas on the upper part of the TiN film; and annealing the resulting structure at N.sub.2 atmosphere for diffusing oxygen ions, thereby forming said resulting structure into uniform TiNO film.