The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 1999
Filed:
Dec. 29, 1997
Vladislav Y Vassiliev, Singapore, SG;
Chartered Semiconductor Manufacturing, Ltd., Singapore, SG;
Abstract
Films of fluorinated silicon oxide, suitable for use as inter-metal dielectrics, have been deposited by means of CVD at reduced pressure using fluorotriethoxysilane (FTES) and tetra-exthyloxysilane (TEOS) as the precursors, together with ozone (mixed with oxygen). If tight control over the deposition conditions is exercised, high quality films having no surface damage and good step coverage, with no trapped voids, can be obtained. In a second embodiment of the invention, the TEOS is omitted and only FTES is used. Among the most important deposition parameters we include temperature at 400-500.degree. C., pressure at 200-260 torr, ozone concentration (in oxygen) 8-12%, and an ozone:precursor ratio of 3-10 to 1 weight percent. In a third embodiment, a stacked layer is formed, consisting of at least one fluorinated silicon oxide layer and one silicon dioxide layer, deposited within the same deposition process by changing the TEOS or the FTES flow.