The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1999
Filed:
Aug. 27, 1997
Robert A Neger, Crofton, MD (US);
Richard F Fensler, Annandale, VA (US);
Martin Lampe, University Park, MD (US);
Wallace Manheimer, Silver Spring, MD (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
The large area plasma processing system (LAPPS) is a system wherein an elron beam is used to produce a plasma. A large area uniform plasma is produced where length and width can be comparable (10's-100's of cm) and very much larger than the plasma thickness (.about.1 cm). The plasma distribution is created independent of the surface to be processed and the bias applied to the surface. The beam-produced plasma has a low intrinsic electron and excitation temperature plasma, allowing the process to be conducted with better control of free radical production. A material, such as a substrate, being processed may be placed in close proximity to plasma with controlled ion bombardment or without substantial bombardment by energetic ions. The system also offers a large available area for gas inflow and removal from the processing chamber and cathode chamber so as not to contaminate the material being processed or damage the cathode.