The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1999
Filed:
May. 13, 1996
Applicant:
Inventors:
Peter D Hoh, Hopewell Junction, NY (US);
Tokuhisa Ohiwa, Takatsu-ku, JP;
Virinder Grewal, Fishkill, NY (US);
Bruno Spuler, Munich, DE;
Waldemar Kocon, Wappingers Falls, NY (US);
Guadalupe Wiltshire, Hopewell Junction, NY (US);
Assignees:
Kabushiki Kaisha Toshiba, Kanagawa-ken, JP;
International Business Machines Corporation, Armonk, NY (US);
Siemens Components, Inc., Iselin, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438721 ; 438738 ;
Abstract
Metal silicide is removed at a faster rate than polysilicon in dry etching of metal silicide/polysilicon composites with an etching gas made from HCl and Cl.sub.2 at a volumetric flowrate ratio of HCl:Cl.sub.2 within the range of 3:1 to 5:1.