The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1999
Filed:
May. 21, 1996
Applicant:
Inventors:
Ritsuo Takizawa, Tokyo, JP;
Takahisa Kusaka, Tokyo, JP;
Takayoshi Higuchi, Kanagawa, JP;
Hideo Kanbe, Kanagawa, JP;
Masanori Ohashi, Kanagawa, JP;
Assignee:
Sony Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438473 ; 438143 ;
Abstract
In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1.times.10.sup.16 atoms/cm.sup.3 or more.
Takizawa, Ritsuo. (1999). Semiconductor wafer and method of manufacturing same (U.S. Patent No. 5874348). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5874348
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile