The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 1999
Filed:
May. 15, 1997
Applicant:
Inventors:
Takafumi Tokunaga, Iruma, JP;
Sadayuki Okudaira, Ohme, JP;
Tatsumi Mizutani, Koganei, JP;
Kazutami Tago, Hitachinaka, JP;
Hideyuki Kazumi, Hitachi, JP;
Ken Yoshioka, Kudamatsu, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
B44C / ; C03C / ; C23F / ;
U.S. Cl.
CPC ...
216 67 ; 216 68 ; 216 69 ; 216 70 ;
Abstract
To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited to a metastable state in a plasma and a flon gas to interact with each other, and selectively obtaining desired dissociated species.