The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1999
Filed:
May. 20, 1996
Applicant:
Inventor:
Iman Hsu, Mtao-Li, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B44C / ;
U.S. Cl.
CPC ...
438720 ; 438710 ; 438723 ; 438729 ; 438737 ; 216 71 ;
Abstract
A method is provided wherein a process suitable for subtractive etching of titanium nitride layers useful in the fabrication of semiconductor integrated circuit devices can be efficiently employed on commercially-available plasma reactor system equipment normally suitable only for subtractive etching of passivation layer materials and the like, resulting in increased efficiency and reduced cost in the manufacturing of such devices.