The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1999
Filed:
Jul. 25, 1996
Lai-Juh Chen, Hsin-chu, TW;
Industrial Technology Research Institute, Hsin-Chu, TW;
Abstract
This invention describes a method of using Chemical Mechanical Polishing to planarize integrated circuit wafers using shallow trench isolation to provide isolation between devices in the wafer. After the material used to fill the shallow trenches has been formed a layer of Spin On Glass is formed over the material used to fill the shallow trenches. The polishing rate for the material used to fill the shallow trenches is at least twice as large as the polishing rate of the Spin On Glass. This difference in polishing rate causes the Spin On Glass to be the controlling factor in the overall polishing rate and a planar surface free of dishing or unwanted residue is achieved. In at least one of the embodiments the rate of change of the polishing pad temperature can be used to determine the end point of the polishing.