The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 1999
Filed:
Dec. 26, 1996
Jung-Sung Hwang, Kyungki-do, KR;
Dong-Joo Lee, Kyungki-do, KR;
Nam-Hee You, Kyungki-do, KR;
Sang-Young Moon, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
An apparatus for quantitatively depositing molecular impurities on a semiconductor wafer, includes a reaction chamber, a gas generator for generating a source gas serving as the molecular impurities, a humidifier for generating moisture vapour of a constant temperature, a mixer for mixing the source gas and the moisture vapour to generate a mixed gas, a gas injector for injecting the mixed gas into the reaction chamber, an exhausting part for initiating a vacuum condition in the reaction chamber before deposition of the molecular impurities and for exhausting a remaining gases after deposition of the molecular impurities, and a cleaning air supply portion for supplying a cleaning air into the reaction chamber before deposition of the molecular impurities. After fabricating a semiconductor device using the wafer processed as above, a defective source of mechanism of contamination can be traced by analysing the semiconductor device.