The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 1999
Filed:
Jan. 13, 1998
Applicant:
Inventor:
Kuniko Miyakawa, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438655 ; 438656 ; 438659 ; 438683 ;
Abstract
On a silicon substrate (1) is formed a MOS transistor which comprises a gate oxide film (3), a polysilicon gate electrode (4), an LDD diffusion layer (5) and a source/drain diffusion layer (7). A Ti film (8) is formed over the entire surface of the MOS transistor, the surface areas of the source/drain diffusion layer (7) and the polysilicon gate electrode (4) are silicified to form Ti silicide film (9, 10). Thereafter, W or Ta is ion-implanted as an alloy forming material into Ti silicide (10), and an anneal treatment is performed to react doped W or Ta with Ti silicide (10) and form TiW.sub.x Si.sub.y or TiTa.sub.x Si.sub.y (11).