The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 1999

Filed:

Jun. 30, 1997
Applicant:
Inventors:

George Czornyj, Poughkeepsie, NY (US);

Moonhor Ree, Kyongbuk, KR;

Willi Volksen, San Jose, CA (US);

Dominic Changwon Yang, Woodbury, CT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C08G / ; G03F / ;
U.S. Cl.
CPC ...
522 18 ; 522 27 ; 522 28 ; 522164 ; 522149 ; 525420 ; 525421 ; 525928 ; 528313 ; 528315 ; 528316 ; 528353 ; 430194 ; 4302871 ;
Abstract

New photosensitive polyamic acid precursors are disclosed which have the formula: ##STR1## where Z is a tetravalent organic radical which contains at least one aromatic ring, Z' is a divalent organic radical which contains at least one aromatic ring, and R* is a photo polymerizable group. Particularly preferred compounds include BPDA-PDA and BPDA-ODA polyamic acid precursors. The precursor compositions within the practice of this invention are i-line, g-line, and i-/g-line active and show good photoresolution. The films formed exhibit excellent self-adhesion and adhesion to glass ceramic and silicon wafer substrates have low internal stress, a very low degree of solvent swelling, high thermal stability, and excellent mechanical properties such as high modulus/tensile strength and high elongation at break.


Find Patent Forward Citations

Loading…