The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1999
Filed:
Jul. 03, 1997
Yoshio Muto, Tokyo, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
The object of the present invention is to provide a semiconductor device and a process of producing the same, in which a low contact resistance is ensured, the interwiring connection of a multilayered conductor wiring structure has good long term reliability, and the production time can be reduced. An interlaminar insulating layer 4 is etched with an etchant gas containing a fluorine-based gas to form a contact hole 6, during which a fluoride layer 22 is formed on a Ti layer 13 which forms an upper protective layer of a conductor wiring layer 3 on the bottom of the contact hole 6. According to the present invention, the fluoride layer 22 is removed, together with the Ti layer 13 on the bottom of the contact hole 6, by a gas mixture of a fluorine-based gas and oxygen gas in an ashing apparatus.