The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1999
Filed:
Jul. 01, 1997
Hsingya Arthur Wang, Saratoga, CA (US);
Jein-Chen Young, Milpitas, CA (US);
Nicholas H Tripsas, San Jose, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A silicon substrate has patterned thereon a pad oxide layer and a nitride layer. The exposed surface of the silicon substrate is cleaned of residual oxide, and a layer of oxidizable material such as polysilicon is deposit over the resulting structure. The polysilicon layer is anisotropically etched to form spacers on the side of the nitride layer portions, which are also in contact with the silicon substrate, the etching continuing into the silicon substrate. Field oxidation is then undertaken, with the polysilicon spacers being oxidized, as is a portion of the silicon substrate, the spacers causing initial oxidation during field oxide growth to be removed from the sides of the nitride layer portions, so that encroachment of the oxide under the nitride layer portions is avoided.