The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 1999
Filed:
Sep. 11, 1995
Yuichiro Mitani, Yokohama, JP;
Ichiro Mizushima, Yokohama, JP;
Shigeru Kambayashi, Kawasaki, JP;
Hirotaka Nishino, Pittsburgh, PA (US);
Masahiro Kashiwagi, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method of manufacturing a semiconductor device includes the steps of forming an insulating film on a silicon region of a substrate having the silicon region on a surface the insulating film having an opening for forming an exposed region of the silicon region, supplying a gas containing a halogen onto the silicon region, and supplying a source gas of silicon onto the silicon region, thereby selectively depositing the silicon on the exposed region of the silicon region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile