The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 1999

Filed:

Sep. 27, 1995
Applicant:
Inventors:

Sotomitsu Ikeda, Atsugi-shi, JP;

Masato Yamanobe, Machida-shi, JP;

Ichiro Nomura, Atsugi-shi, JP;

Hidetoshi Suzuki, Fujisawa-shi, JP;

Yoshikazu Banno, Machida, JP;

Takeo Tsukamoto, Atsugi-shi, JP;

Shinichi Kawate, Sagamihara-shi, JP;

Toshihiko Takeda, Yamato-shi, JP;

Keisuke Yamamoto, Yamato-shi, JP;

Kazuhiro Sando, Atsugi-shi, JP;

Yasuhiro Hamamoto, Machida, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ; G03G / ;
U.S. Cl.
CPC ...
430 31 ; 427 49 ; 313309 ;
Abstract

In a manufacture method of an electron-emitting device in which an electro-conductive film having an electron-emitting region is provided between electrodes disposed on a substrate, a step of forming the electron-emitting region comprises a step of forming a structural latent image in the electro-conductive film, and a step of developing the structural latent image. An electron source comprising a plurality of electron-emitting devices arrayed on a substrate, and an image-forming apparatus in combination of the electron source and an image-forming member are manufactured by using the electron-emitting devices manufactured by the above method. The position and shape of an electron-emitting region of each electron-emitting device can be controlled so as to achieve uniform device characteristics, resulting less variations in the amount of emitted electrons between the electron-emitting devices and in the brightness of pictures. Also, the need of flowing a great current for formation of the electron-emitting region is eliminated and hence the current capacity of wiring can be reduced.


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