The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1999
Filed:
Feb. 05, 1997
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 66 ; 257 67 ; 257347 ;
Abstract
A semiconductor device is an SRAM cell having a pair of access transistors, a pair of driver transistors and a pair of load transistors. A gate electrode of the load transistor is electrically connected to a region of a semiconductor substrate which is surrounded by a gate electrode of the driver transistor, a channel region of the load transistor is formed opposite to the gate electrode of the load transistor with an insulating film therebetween, and a pair of source/drain regions of the load transistor are formed to sandwich the channel region.