The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1999
Filed:
Oct. 11, 1996
Applicant:
Inventors:
Tai-su Park, Kyungki-do, KR;
Moon-han Park, Kyungki-do, KR;
Yu-gyun Shin, Seoul, KR;
Han-sin Lee, Kyungki-do, KR;
Assignee:
Samsung Electronics Co., Ltd., Kyungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02L / ;
U.S. Cl.
CPC ...
438424 ; 438437 ; 438702 ; 438692 ; 438743 ;
Abstract
A method for forming a microelectronic structure includes the steps of forming a mask layer on a substrate, forming a trench in the exposed portion of the substrate, forming a layer of an insulating material which fills the trench and covers the mask layer, and annealing the insulating material at a temperature of at least about 1,150.degree. C. The annealing step can be performed for a period of time of about .5 hours to about 8 hours, and the annealing step can be performed in an inert atmosphere.