The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 1999
Filed:
Jan. 21, 1997
Won-seong Lee, Seoul, KR;
Chang-gyu Hwang, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
Integrated circuit memory devices are manufactured by forming spaced apart source and drain regions in an integrated circuit substrate, and an insulated gate on the integrated circuit substrate therebetween. An interlayer insulating layer is formed on the integrated circuit substrate, including first and second conductive pad contacts which extend therethrough and which electrically contact the source and the drain region, respectively. A trench is formed in the interlayer insulating layer, including in the second conductive pad contact. A first insulating layer is formed to line the trench, except for adjacent the second conductive pad contact. A buried bit line is formed in the trench, electrically contacting the second conductive pad contact through the first insulating layer. A second insulating layer is formed on the first insulating layer and on the buried bit line, except for adjacent the first conductive pad contact. A patterned storage electrode is formed on the second insulating layer, which electrically contacts the first conductive contact pad.