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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5858828 B1

PDFFull Text
Date of Patent:
Jan. 12, 1999

Filed:

Feb. 18, 1997

Use of mev implantation to form vertically modulated n+ buried layer in

Applicant:
Inventors:

John J Seliskar, Colorado Springs, CO (US);

David W Daniel, Divide, CO (US);

Todd A Randazzo, Colorado Springs, CO (US);

Assignee:

Symbios, Inc., Fort Collins, CO (US);

Attorneys:

Yee; Duke W.

Bailey; Wayne P.

Primary Examiner:

Olik Chaudhuri

Assistant Examiner:

William David Coleman

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
438234 ; 438370 ; 438526 ; 438509 ; 438950 ; 257565 ;
Abstract

High energy implantation through varying vertical thicknesses of one or more films is used to form a vertically modulated sub-collector, which simultaneously reduces both the vertical and lateral components of parasitic collector resistance in a vertically integrated bipolar device. The need for a sinker implant or other additional steps to reduce collector resistance is avoided. The necessary processing modifications may be readily integrated into conventional bipolar or BiCMOS process flows.

Find Patent Forward Citations

Seliskar, John. (1999). Use of mev implantation to form vertically modulated n+ buried layer in (U.S. Patent No. 5858828). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5858828

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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