The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 1999
Filed:
Jun. 02, 1997
Jin Ki Jung, Kyoungki-do, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
A method for fabricating a metal wire of semiconductor devices is provided and comprises the steps of: depositing a barrier metal layer on an insulating film and subjecting the barrier metal layer to SF.sub.6 plasma treatment; forming an aluminum metal layer, a reflection-preventive layer and a photoresist film pattern on the surface of the barrier metal layer, in order; etching the reflection-preventive layer, the aluminum metal layer and the barrier metal layer to form a metal wire, with the photoresist film pattern serving as an etch mask; and removing the photoresist film pattern. The SF.sub.6 plasma treatment leaves no residue on the insulating film 2 during etching, as silicon nodule grows a little on the barrier metal layer when the aluminum metal layer is deposited thereon.