The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 1998
Filed:
Apr. 09, 1997
Applicant:
Inventor:
Jun-Cheng Ko, Taichung, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438712 ; 438723 ; 438301 ; 438305 ; 438307 ; 438 16 ;
Abstract
An anisotropic RIE procedure for creating a small diameter SAC opening, in an insulator layer, used in the fabrication sequence of a MOSFET device, and using a large area test site for RIE end point monitoring, has been developed. The RIE procedure features a RIE ambient, including oxygen as part of the RIE ambient, resulting in equal amounts of polymer deposition on the small diameter SAC opening, as well as on the large area test sites, during the reactive ion etching of the small diameter, SAC opening. This allows accurate monitoring of the RIE procedure to be performed on the large area test site, using optical ellipsometry procedures.