The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 1998
Filed:
Feb. 13, 1997
Applicant:
Inventor:
Hideyuki Shoji, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F / ;
U.S. Cl.
CPC ...
216 46 ; 216 64 ; 216 67 ; 216 75 ; 438695 ; 438704 ; 438714 ; 438720 ; 438963 ;
Abstract
A refractory metal layer on a silicon oxide layer is exposed to gaseous etchant containing SF.sub.6, Cl.sub.2 and CO so as to be patterned; F radical and Cl radical effectively etch the refractory metal, and a reaction product of CO gas does not allow the dry etching to sidewardly proceed so that the dry etching achieves good anisotropy, a large etching rate and a large selectivity to silicon oxide.