The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
Nov. 12, 1997
Applicant:
Inventors:
Assignee:
United Semiconductor Corp., , TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257326 ; 257316 ; 438258 ;
Abstract
A flash memory cell structure comprising a semiconductor substrate having a first transistor and a second transistor formed thereon. The first transistor has a stacked gate and a first source/drain regions, wherein the stacked gate further includes a floating gate and a control gate. The control gate is formed above the floating gate. The second transistor is electrically connected in series with the first transistor. The second transistor functions as a select transistor and includes a gate and a second source/drain regions.
Hong, Gary. (1998). Flash memory cell structure having a high gate-coupling coefficient and (U.S. Patent No. 5852313). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5852313
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile