The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
Jun. 09, 1997
Kuniko Miyakawa, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a method of manufacturing a semiconductor device including a first and a second insulator film and a first and a second conductive layer held to the first and said second insulator films, respectively. The first insulator film is formed to have a first wiring trench along an upper surface of the first insulator film and a first through hole extending from the first wiring trench to a lower surface of the first insulator film. A first conductive material is deposited on the upper surface of the first insulator film to fill the first wiring trench and the first through hole. Thereafter, the first conductive material is partially removed to have an upper surface coplanar with the upper surface of the first insulator film. As a result, the first conductive material becomes the first wiring layer. Next, the second insulator film and the second wiring layer are formed in the manner which is similar to that of forming the first insulator film and the first wiring layer.