The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
Aug. 08, 1996
Peter Weigand, Croton on Hudson, NY (US);
Siemens Aktiengesellschaft, Munich, DE;
Abstract
Described is a method for filling shallow trench isolation (STI) trenches in a semiconductor substrate of an integrated circuit with an insulating material and planarizing the resulting structure to the level of adjacent portions of the integrated circuit. The method comprises forming trenches in the non-active regions of a semiconductor substrate, depositing a layer of oxide in the trenches and over the surface of the semiconductor substrate, and removing the oxide from the active areas of the integrated circuit structure, leaving oxide-filled shallow trench isolation structures having a substantially planar topography with respect to the rest of the integrated circuit structure.