The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 22, 1998
Filed:
Jul. 24, 1997
Applicant:
Inventor:
Masanobu Zenke, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ;
U.S. Cl.
CPC ...
427 97 ; 427 99 ; 427124 ; 438656 ; 438913 ;
Abstract
A contact is formed in an insulating film covering on a silicon substrate and thereafter an amorphous silicon film is deposited thereon at 400.degree. to 500.degree. C. by using disilane. A tungsten film is then formed and etched back to form a tungsten plug through etch-back.
Zenke, Masanobu. (1998). Semiconductor device fabrication method for preventing tungsten from (U.S. Patent No. 5851581). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5851581
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile