The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 15, 1998

Filed:

Mar. 19, 1997
Applicant:
Inventors:

David R Arnett, Fremont, CA (US);

Jeffrey V Musser, Boise, ID (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438734 ; 438713 ; 438714 ; 438720 ; 438742 ; 216 67 ; 257775 ;
Abstract

A method in a substrate processing chamber for forming a conductive feature by etching through a conductive layer disposed above a semiconductor substrate. The method includes etching at least partially through the conductive layer using a first etch recipe to form a top portion of the conductive feature. The method further includes thereafter etching at least partially through a remaining thickness of the conductive layer using a second etch recipe different from the first etch recipe to form a bottom portion of the conductive feature. The bottom portion is disposed below the top portion. The second etch recipe is configured to yield a sloped etch foot in the bottom portion of the conductive feature.


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