The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
Aug. 23, 1996
Applicant:
Inventors:
Takeshi Kamata, Kanagawa, JP;
Hiroshi Arimoto, Kanagawa, JP;
Makoto Kosugi, Kanagawa, JP;
Koichi Hashimoto, Kanagawa, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438729 ; 216 71 ; 216 67 ; 438710 ;
Abstract
In a plasma equipment and a plasma treatment method of a semiconductor device capable of reducing electron shading effect and also suppressing charge damage without affecting various characteristics in plasma process, a distance between a substrate bias electrode and A counter electrode is set less than two times as long as a mean free path of electron. High frequency electric power of 100 kHz to 1 MHz is supplied to the substrate bias electrode, while high frequency electric power of 1 MHz to 100 MHz is supplied to the counter electrode.