The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
Jul. 24, 1996
Applicant:
Inventors:
Takashi Hashimoto, Ome, JP;
Hideo Miura, Koshigaya, JP;
Toshiyuki Kikuchi, Ome, JP;
Toshiyuki Mine, Fussa, JP;
Yoichi Tamaki, Kokubunji, JP;
Takahiro Kumauchi, Hamura, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438365 ; 438368 ; 438378 ; 438745 ; 438906 ;
Abstract
A method of manufacturing a bipolar transistor having an improved polysilicon emitter is disclosed. More specifically, hydrogen terminations or OH group terminations adhered (bonded) to an emitter-forming region are eliminated by a heat treatment in an inert gas atmosphere before forming emitter polysilicon. Subsequently, an amorphous silicon film for forming an emitter polysilicon is formed at a low temperature.