The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
Apr. 03, 1996
Applicant:
Inventors:
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; H05H / ;
U.S. Cl.
CPC ...
427569 ; 427570 ; 427573 ; 427574 ; 427578 ; 430128 ;
Abstract
Provided is a process for efficiently forming a high-quality deposited film at a high deposition rate in the quality equivalent to or higher than that of films formed by the RF plasma CVD process. A stock gas is introduced under a reduced pressure into a reaction container provided with a cathode electrode inside and a high-frequency power in the range of 50 to 300 MHz is supplied to the cathode electrode, whereby ions of the stock gas with energy of 40 or more eV are made to hit against a substrate, thereby forming a deposited film thereon.