The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 08, 1998
Filed:
Jul. 09, 1996
Susan C Abraham, San Jose, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method in a plasma processing chamber, for etching through a selected portion of an aluminum-containing layer and a titanium-containing layer. The titanium-containing layer is disposed above the aluminum-containing layer. The method includes a first etching step that etches at least partially through the titanium-containing layer using a first source gas composition. The first source gas composition consists essentially of the Cl.sub.2 etchant and a first mixture. The first mixture consists essentially of HCl and CHF.sub.3. The first source gas composition has a first flow ratio of the Cl.sub.2 etchant to the first mixture. There is further included a second etching step that etches at least partially through the aluminum-containing layer using a second source gas composition. The second source gas composition consists essentially of a Cl.sub.2 etchant and a second mixture. The second mixture consists essentially of HCl and CHF.sub.3. The second source gas composition has a second flow ratio of the Cl.sub.2 etchant to the second mixture different from the first flow ratio.