The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 1998

Filed:

Nov. 20, 1995
Applicant:
Inventors:

Stanford R Ovshinsky, Bloomfield Hills, MI (US);

Michael A Fetcenko, Rochester Hills, MI (US);

Jun Su Im, Sterling Heights, MI (US);

Kwo Young, Troy, MI (US);

Benjamin S Chao, Troy, MI (US);

Benjamin Reichman, West Bloomfield, MI (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01M / ;
U.S. Cl.
CPC ...
429 60 ; 429 59 ; 429101 ; 429218 ; 420900 ; 420417 ; 420421 ; 420422 ; 204293 ;
Abstract

Disordered multicomponent hydrogen storage material characterized by extraordinarily high storage capacity due to a high density of useable hydrogen storage sites (greater than 10.sup.23 defect sites/cc) and/or an extremely small crystallite size. The hydrogen storage material can be employed for electrochemical, fuel cell and gas phase applications. The material may be selected from either of the modified LaNi.sub.5 or modified TiNi families formulated to have a crystallite size of less than 200 Angstroms and most preferably less than 100 Angstroms.


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