The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 24, 1998

Filed:

Jul. 22, 1996
Applicant:
Inventors:

Ichiro Hayashida, Kawagoe, JP;

Masahiko Kakizawa, Kawagoe, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B08B / ;
U.S. Cl.
CPC ...
134-2 ; 134 26 ; 134 28 ; 134 29 ;
Abstract

The concentration of Al on silicon surface is reduced to lose its influence on the growth rate of an oxide film during thermal oxidation when semiconductor surface treatment is carried out by a process for treating semiconductor surfaces which comprises a step of cleaning surfaces of semiconductors with a semiconductor surface treating agent comprising an inorganic or organic alkali, hydrogen peroxide and water as major components, and a step of rinsing the resulting surfaces with ultra-pure water, at least one of the semiconductor surface treating agent and the ultra-pure water containing as a complexing agent a compound having three or more ##STR1## groups in the molecule or a salt thereof.


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